The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Feb. 05, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Yu-Hsiang Hung, Tainan, TW;
Chao-Hung Lin, Changhua County, TW;
Ying-Tsung Chen, Kaohsiung, TW;
Chih-Kai Hsu, Tainan, TW;
Ssu-I Fu, Kaohsiung, TW;
Jyh-Shyang Jenq, Tainan, TW;
Shih-Hung Tsai, Tainan, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A semiconductor device includes a plurality of gate structures, a source/drain region, a first dielectric layer, and a floating spacer. The gate structures are disposed on a substrate, and each gate structure includes a gate electrode, a capping layer and a spacer surrounding the gate electrode and the capping layer. The source/drain region is disposed at two sides of the gate electrode. The first dielectric layer is disposed on the substrate and has a height being less than a height of the gate electrode. The floating spacer is disposed on a side wall of the spacer, and also on the first dielectric layer.