The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Feb. 12, 2013
Infineon Technologies Ag, Neubiberg, DE;
Rudolf Berger, Regensburg, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Anton Mauder, Kolbermoor, DE;
Wolfgang Lehnert, Lintach, DE;
Günther Ruhl, Regensburg, DE;
Roland Rupp, Lauf, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A composite wafer includes a substrate and a SiC-based functional layer. The substrate includes a porous carbon substrate core and an encapsulating layer encapsulating the substrate core. The SiC-based functional layer comprises, at an interface region with the encapsulating layer, at least one of: a carbide and a silicide formed by reaction of a portion of the SiC-based functional layer with a carbide-and-silicide-forming metal. An amount of the carbide-and-silicide-forming metal, integrated over the thickness of the functional layer, is 10mg/cmto 0.1 mg/cm.