The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Dec. 26, 2012
Applicant:
Commissariat a L'energie Atomique ET Aux Ene Alt, Paris, FR;
Inventors:
Nicolas Posseme, Carantec, FR;
Laurent Grenouillet, Rives, FR;
Yannick Le Tiec, Crolles, FR;
Maud Vinet, Rives, FR;
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 29/66477 (2013.01); H01L 29/66636 (2013.01); H01L 29/66772 (2013.01); H01L 29/7848 (2013.01);
Abstract
A transistor includes an active layer forming a channel for the transistor, an insulating layer disposed facing a lower face of the active layer, a gate turned toward an upper face of the active layer and a source and a drain disposed on both sides of the gate. At least one among the source and the drain extends at least partly through the active layer and into the insulating layer.