The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Jun. 06, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Ming-Feng Shieh, Yongkang, TW;
Wen-Hung Tseng, Luodong Township, TW;
Chih-Ming Lai, Hsinchu, TW;
Ken-Hsien Hsieh, Taipei, TW;
Tsai-Sheng Gau, HsinChu, TW;
Ru-Gun Liu, Zhubei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for forming metal contacts within a semiconductor device includes forming a first-layer contact into a first dielectric layer that surrounds at least one gate electrode, the first-layer contact extending to a doped region of an underlying substrate. The method further includes forming a second dielectric layer over the first dielectric layer and forming a second-layer contact extending through the second dielectric layer to the first-layer contact.