The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2016

Filed:

Aug. 04, 2015
Applicant:

Disco Corporation, Tokyo, JP;

Inventors:

Susumu Yakoo, Tokyo, JP;

Hiroyuki Takahashi, Tokyo, JP;

Kenji Okazaki, Tokyo, JP;

Yoshiteru Nishida, Tokyo, JP;

Tomotaka Tabuchi, Tokyo, JP;

Assignee:

Disco Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/78 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 21/02013 (2013.01); H01L 21/02016 (2013.01); H01L 21/02019 (2013.01); H01L 21/02057 (2013.01); H01L 21/3065 (2013.01); H01L 21/3083 (2013.01);
Abstract

A wafer processing method includes forming a resist film on the front side of a wafer in an area except division lines, plasma etching the wafer to form a groove on the front side of the wafer along each division line, the groove having a depth greater than a finished thickness, removing the resist film from the front side of the wafer by cleaning, and grinding the back side of the wafer to reduce the thickness of the wafer to the finished thickness, so that the groove is exposed to the back side of the wafer to thereby divide the wafer into individual device chips. In the resist film removing step, a chemical fluid is sprayed to the resist film formed on the front side of the wafer, thereby removing the resist film.


Find Patent Forward Citations

Loading…