The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2016

Filed:

Oct. 29, 2014
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Ryo Nonaka, Miyagi, JP;

Masanori Sato, Miyagi, JP;

Natsuki Yabumoto, Miyagi, JP;

Takamitsu Takayama, Miyagi, JP;

Akitoshi Harada, Miyagi, JP;

Junichi Sasaki, Miyagi, JP;

Hidetoshi Hanaoka, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); C23C 4/12 (2006.01); C23C 14/34 (2006.01); C23F 4/00 (2006.01); H01J 37/34 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32715 (2013.01); H01J 37/32477 (2013.01); H01J 37/34 (2013.01);
Abstract

A plasma processing method of the present disclosure includes attaching a Si-containing material or a N-containing material to an electrostatic chuck that is provided in a processing container and attached with a reaction product containing C and F, in a state where a workpiece is not mounted on the electrostatic chuck; adsorbing the workpiece by the electrostatic chuck attached with the Si-containing material or the N-containing material when the workpiece is carried into the processing container; processing the workpiece with plasma; and separating the workpiece processed with plasma from the electrostatic chuck attached with the Si-containing material or the N-containing material.


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