The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Apr. 06, 2015
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Mark A. Bossler, Meridian, ID (US);
Jaspreet S. Gandhi, Boise, ID (US);
Christopher J. Gambee, Caldwell, ID (US);
Randall S. Parker, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 23/538 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/3065 (2013.01); H01L 21/30604 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 23/5384 (2013.01); H01L 21/02068 (2013.01); H01L 21/02238 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A method for selectively removing material from a substrate without damage to copper filling a via and extending at least partially through the substrate. The method comprises oxidizing a semiconductor structure comprising a substrate and at least one copper feature and removing a portion of the substrate using an etchant comprising SFwithout forming copper sulfide on the at least one copper feature. Additional methods are also disclosed, as well as semiconductor structures produced from such methods.