The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2016

Filed:

Nov. 06, 2013
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;

Inventors:

Hsin-Ying Lin, Tainan, TW;

Mei-Yun Wang, Chu-Pei, TW;

Hsien-Cheng Wang, Hsinchu, TW;

Shih-Wen Liu, Taoyuan, TW;

Fu-Kai Yang, Hsinchu, TW;

Audrey Hsiao-Chiu Hsu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01);
Abstract

Embodiments of mechanism for an integrated circuit (IC) structure are provided. The IC structure includes a substrate including a first diffusion region, a second diffusion region, and an isolation structure separating the first diffusion region and the second diffusion region. The IC structure further includes a gate structure formed over the substrate, and the gate structure extends from the first diffusion region to the second diffusion region. The IC structure further includes a contact formed over the substrate, and the contact includes a wide portion over the first diffusion region and the second diffusion region and a thin portion over the isolation structure.


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