The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Jun. 20, 2011
Thaddeus G. Dziura, San Jose, CA (US);
Yung-ho Chuang, Cupertino, CA (US);
Bin-ming Benjamin Tsai, Saratoga, CA (US);
Xuefeng Liu, San Jose, CA (US);
John J. Hench, San Jose, CA (US);
Thaddeus G. Dziura, San Jose, CA (US);
Yung-Ho Chuang, Cupertino, CA (US);
Bin-ming Benjamin Tsai, Saratoga, CA (US);
Xuefeng Liu, San Jose, CA (US);
John J. Hench, San Jose, CA (US);
KLA-TENCOR CORPORATION, Milpitas, CA (US);
Abstract
Optimization of optical parametric models for structural analysis using optical critical dimension metrology is described. A method includes determining a first optical model fit for a parameter of a structure. The first optical model fit is based on a domain of quantities for a first model of the structure. A first near optical field response is determined for a first quantity of the domain of quantities and a second near optical field response is determined for a second, different quantity of the domain of quantities. The first and second near optical field responses are compared to locate a common region of high optical field intensity for the parameter of the structure. The first model of the structure is modified to provide a second, different model of the structure. A second, different optical model fit is determined for the parameter of the structure based on the second model of the structure.