The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Oct. 24, 2013
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Fu-Ming Huang, Shengang Township, TW;
Han-Hsin Kuo, Tainan, TW;
Chi-Ming Tsai, New Taipei, TW;
Liang-Guang Chen, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 23/532 (2006.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/321 (2013.01); H01L 21/76862 (2013.01); H01L 21/76883 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor substructure with improved performance and a method of forming the same is described. The method includes providing a semiconductor dielectric layer having a recess formed therein; forming an interconnect structure with a metal liner and a conductive fill within the recess; and applying an electron beam treatment to the substructure.