The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2016

Filed:

Jul. 22, 2013
Applicant:

Cabot Microelectronics Corporation, Aurora, IL (US);

Inventors:

Dimitry Dinega, Aurora, IL (US);

Kevin Moeggenborg, Midland, MI (US);

William Ward, Glen Ellyn, IL (US);

Daniel Mateja, Oswego, IL (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/304 (2006.01); C09G 1/02 (2006.01); H01L 21/306 (2006.01); C09G 1/00 (2006.01); C09G 1/04 (2006.01); C09K 13/06 (2006.01); C09K 3/14 (2006.01); B24B 1/00 (2006.01); H01L 21/3105 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
C09G 1/02 (2013.01); B24B 1/00 (2013.01); C09G 1/00 (2013.01); C09G 1/04 (2013.01); C09K 3/1463 (2013.01); C09K 13/06 (2013.01); H01L 21/30625 (2013.01); H01L 21/31053 (2013.01); H01L 21/3212 (2013.01);
Abstract

The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprising a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to 9.5 and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkylammonium polymer.


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