The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Dec. 24, 2013
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Audrey Hsiao-Chiu Hsu, Hsinchu, TW;
Fu-Kai Yang, Hsinchu, TW;
Mei-Yun Wang, Hsin-Chu, TW;
Hsien-Cheng Wang, Hsinchu, TW;
Shih-Wen Liu, Taoyuan County, TW;
Hsin-Ying Lin, Tainan, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
A method for manufacturing semiconductor device is provided. The method includes the following operations: providing a first conductive portion, a second conductive portion and a third conductive portion over a substrate; forming a dielectric layer over the first conductive portion, the second conductive portion, and the third conductive portion; forming a high-resistance layer over the first conductive portion; forming an oxide layer over the high-resistance layer and the dielectric layer; patterning the dielectric layer and the oxide layer by using the high-resistance layer as a blocking layer to form a first recess to expose the second conductive portion and the third conductive portion and to prevent the first conductive portion from exposure; and forming a plug layer in the first recess to connect the second conductive portion and the third conductive portion.