The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Apr. 26, 2012
Svetlana B. Radovanov, Brookline, MA (US);
Victor M. Benveniste, Lyle, WA (US);
Bon-woong Koo, Andover, MA (US);
Richard M. White, Newmarket, NH (US);
Kevin M. Daniels, Lynnfield, MA (US);
Svetlana B. Radovanov, Brookline, MA (US);
Victor M. Benveniste, Lyle, WA (US);
Bon-Woong Koo, Andover, MA (US);
Richard M. White, Newmarket, NH (US);
Kevin M. Daniels, Lynnfield, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
An ion implantation system including a plasma source, a mask-slit, and a plasma chamber. The plasma source is configured to generate a plasma within the plasma chamber in response to the introduction of a gas therein. The mask-slit is electrically isolated from the plasma chamber. A positive voltage bias is applied to the plasma chamber above a bias potential used to generate the plasma. The positive voltage bias drives the plasma potential to accelerate the ions to a desired implant energy. The accelerated ions pass through an aperture in the mask-slit and are directed toward a substrate for implantation. The mask-slit is electrically isolated from the plasma chamber and is maintained at ground potential with respect to the plasma.