The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Jan. 30, 2015
Avogy, Inc., San Jose, CA (US);
Isik C. Kizilyalli, San Francisco, CA (US);
Hui Nie, Cupertino, CA (US);
Andrew P. Edwards, San Jose, CA (US);
Linda Romano, Sunnyvale, CA (US);
David P. Bour, Cupertino, CA (US);
Richard J. Brown, Los Gatos, CA (US);
Thomas R. Prunty, Santa Clara, CA (US);
Avogy, Inc., San Jose, CA (US);
Abstract
A method of growing a III-nitride-based epitaxial structure is disclosed. The method includes forming a GaN-based drift layer coupled to the GaN-based substrate, where forming the GaN-based drift layer comprises doping the drift layer with indium to cause the indium concentration of the drift layer to be less than about 1×10cmand to cause the carbon concentration of the drift layer to be less than about 1×10cm. The method also includes forming an n-type channel layer coupled to the GaN-based drift layer, forming an n-contact layer coupled to the GaN-based drift layer, and forming a second electrical contact electrically coupled to the n-contact layer.