The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2016
Filed:
Mar. 08, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Hsien-Cheng Wang, Hsinchu, TW;
Hung Chang Hsieh, Hsin-Chu, TW;
Shih-Che Wang, Hsin-Chu, TW;
Ping Chieh Wu, Shulin, TW;
Wen-Chun Huang, Xi-Gang Xiang, TW;
Ming-Chang Wen, Kaohsiung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of photolithography including coupling a first aperture to a lithography system, then performing a first illumination process to form a first pattern on a layer of a substrate using the first aperture, thereafter coupling a second aperture to the lithography system, and performing a second illumination process to form a second pattern on the layer of the substrate using the second aperture. The first aperture includes a first pair and a second pair of radiation-transmitting regions. The second aperture includes a second plate having a third pair and a fourth pair of radiation-transmitting regions.