The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2016

Filed:

Nov. 16, 2011
Applicants:

Toshihisa Nozawa, Sendai, JP;

Caizhong Tian, Osaka, JP;

Masaru Sasaki, Miyagi, JP;

Naoki Mihara, Miyagi, JP;

Naoki Matsumoto, Miyagi, JP;

Kazuki Moyama, Sendai, JP;

Jun Yoshikawa, Sendai, JP;

Inventors:

Toshihisa Nozawa, Sendai, JP;

Caizhong Tian, Osaka, JP;

Masaru Sasaki, Miyagi, JP;

Naoki Mihara, Miyagi, JP;

Naoki Matsumoto, Miyagi, JP;

Kazuki Moyama, Sendai, JP;

Jun Yoshikawa, Sendai, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H05H 1/46 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H05H 1/46 (2013.01); H01J 37/3244 (2013.01); H01J 37/32192 (2013.01); H01J 37/32211 (2013.01);
Abstract

An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.


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