The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Jul. 10, 2012
Ssu-i Fu, Kaohsiung, TW;
En-chiuan Liou, Tainan, TW;
Chih-wei Yang, Kaohsiung, TW;
Ying-tsung Chen, Kaohsiung, TW;
Shih-hung Tsai, Tainan, TW;
Ssu-I Fu, Kaohsiung, TW;
En-Chiuan Liou, Tainan, TW;
Chih-Wei Yang, Kaohsiung, TW;
Ying-Tsung Chen, Kaohsiung, TW;
Shih-Hung Tsai, Tainan, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A multi-gate MOSFET includes a substrate, a dielectric layer and at least a fin-shaped structure. The substrate has a first area and a second area. The dielectric layer is only located in the substrate of the first area. At least a fin-shaped structure is located on the dielectric layer. Moreover, the present invention also provides a multi-gate MOSFET process forming said multi-gate MOSFET.