The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Mar. 10, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Kuo-Chyuan Tzeng, Chu-Pei, TW;
Luan C. Tran, Tainan, TW;
Chen-Jong Wang, Hsin-Chu, TW;
Kuo-Chi Tu, Hsin-Chu, TW;
Hsiang-Fan Lee, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Embodiments of MIM capacitors may be embedded into a thick IMD layer with enough thickness (e.g., 10 KŘ30 KÅ) to get high capacitance, which may be on top of a thinner IMD layer. MIM capacitors may be formed among three adjacent metal layers which have two thick IMD layers separating the three adjacent metal layers. Materials such as TaN or TiN are used as bottom/top electrodes & Cu barrier. The metal layer above the thick IMD layer may act as the top electrode connection. The metal layer under the thick IMD layer may act as the bottom electrode connection. The capacitor may be of different shapes such as cylindrical shape, or a concave shape. Many kinds of materials (SiN, ZrO, HfO, BST . . . etc.) can be used as the dielectric material. The MIM capacitors are formed by one or two extra masks while forming other non-capacitor logic of the circuit.