The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Jul. 07, 2014
Lam Research Corporation, Fremont, CA (US);
Samantha S.H. Tan, Fremont, CA (US);
Wenbing Yang, Fremont, CA (US);
Meihua Shen, Fremont, CA (US);
Richard P. Janek, Oakland, CA (US);
Jeffrey Marks, Saratoga, CA (US);
Harmeet Singh, Fremont, CA (US);
Thorsten Lill, Santa Clara, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for etching a stack with an Ru containing layer disposed below a hardmask and above a magnetic tunnel junction (MTJ) stack with pinned layer is provided. The hardmask is etched with a dry etch. The Ru containing layer is etched, where the etching uses hypochlorite and/or Obased chemistries. The MTJ stack is etched. The MTJ stack is capped with dielectric materials. The pinned layer is etched following the MTJ capping.