The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Sep. 23, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Po-Cheng Shih, Hsinchu, TW;
Yu-Yun Peng, Hsinchu, TW;
Chia Cheng Chou, Keelung, TW;
Joung-Wei Liou, Zhudong Town, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of making a semiconductor device including forming a first adhesion layer over a substrate. The method further includes forming a second adhesion layer over the first adhesion layer, where the second adhesion layer is formed using an inert gas with a first flow rate under a first RF power. Additionally, the method includes forming a low-k dielectric layer over the second adhesion layer, where the low-k dielectric layer is formed using the inert gas with a second flow rate under a second RF power under at least one of the following two conditions: 1) the second flow rate is different from the first flow rate; or 2) the second RF power is different from the first RF power. Furthermore, the method includes forming an opening in the dielectric layer, the second adhesion layer, and the first adhesion layer. Additionally, the method includes forming a conductor in the opening.