The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2016
Filed:
Dec. 09, 2011
Jacob M. Jensen, Beaverton, OR (US);
Harold W. Kennel, Portland, OR (US);
Tahir Ghani, Portland, OR (US);
Robert D. James, Portland, OR (US);
Mark Y. Liu, West Linn, OR (US);
Jacob M. Jensen, Beaverton, OR (US);
Harold W. Kennel, Portland, OR (US);
Tahir Ghani, Portland, OR (US);
Robert D. James, Portland, OR (US);
Mark Y. Liu, West Linn, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A pulsed-laser anneal technique includes performing an implant of a selected region of a semiconductor wafer. A co-constituent implant of the selected region is performed, and the pulsed-laser anneal of the selected region performed. A pre-amorphizing implant of the selected region can also be performed. In one embodiment, the implant of the selected region is performed as an insitu implant. In another embodiment, the co-constituent implant is performed as an insitu non-donor implant. In yet another embodiment, the implant and the co-constituent implant of the selected region are performed as an insitu donor and co-constituent implant.