The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2016
Filed:
Sep. 27, 2011
Bruno W. Schueler, San Jose, CA (US);
David A. Reed, Belmont, CA (US);
Jeffrey Thomas Fanton, Los Altos, CA (US);
Rodney Smedt, Los Gatos, CA (US);
Bruno W. Schueler, San Jose, CA (US);
David A. Reed, Belmont, CA (US);
Jeffrey Thomas Fanton, Los Altos, CA (US);
Rodney Smedt, Los Gatos, CA (US);
ReVera, Incorporated, Sunnyvale, CA (US);
Abstract
Systems and methods for characterizing films by X-ray photoelectron spectroscopy (XPS) are disclosed. For example, a system for characterizing a film may include an X-ray source for generating an X-ray beam having an energy below the k-edge of silicon. A sample holder may be included for positioning a sample in a pathway of the X-ray beam. A first detector may be included for collecting an XPS signal generated by bombarding the sample with the X-ray beam. A second detector may be included for collecting an X-ray fluorescence (XRF) signal generated by bombarding the sample with the X-ray beam. Monitoring/estimation of the primary X-ray flux at the analysis site may be provided by X-ray flux detectors near and at the analysis site. Both XRF and XPS signals may be normalized to the (estimated) primary X-ray flux to enable film thickness or dose measurement without the need to employ signal intensity ratios.