The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Mar. 13, 2014
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Wen-Kuei Liu, Xinpu Township, TW;
Teng-Chun Tsai, Hsinchu, TW;
Kuo-Yin Lin, Jhubei, TW;
Shen-Nan Lee, Jhudong Township, TW;
Yu-Wei Chou, Hsinchu, TW;
Kuo-Cheng Lien, Hsinchu, TW;
Chang-Sheng Lin, Baoshan Township, TW;
Chih-Chang Hung, Hsinchu, TW;
Yung-Cheng Lu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
An IC device manufacturing process effectuates a planar recessing of material that initially varies in height across a substrate. The method includes forming a bottom anti-reflective coating (BARC), baking to induce cross-linking in the BARC, CMP to remove a first portion of the BARC and form a planar surface, then plasma etching to effectuate a planar recessing of the BARC. The plasma etching can have a low selectivity between the BARC and the material being recessed, whereby the BARC and the material are recessed simultaneously. Any of the material above a certain height is removed. Structures that are substantially below that certain height can be protected from contamination and left intact. The method can be particularly effective when an abrasive used during CMP forms ester linkages with the BARC.