The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Aug. 01, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Inventors:
Yu-Chia Liu, Kaohsiung, TW;
Chia-Hua Chu, Hsinchu County, TW;
Jung-Huei Peng, Hsinchu Hsien, TW;
Kuei-Sung Chang, Kaohsiung, TW;
Chun-Wen Cheng, Hsinchu County, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B81B 3/00 (2006.01); B81B 7/02 (2006.01);
U.S. Cl.
CPC ...
B81B 7/02 (2013.01); B81C 2203/0714 (2013.01);
Abstract
A method for forming a MEMS device is provided. The method includes the following steps of providing a substrate having a first portion and a second portion; fabricating a membrane type sensor on the first portion of the substrate; and fabricating a bulk silicon sensor on the second portion of the substrate.