The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Jan. 23, 2012
Akinobu Teramoto, Sendai, JP;
Hiroshi Kambayashi, Yokohama, JP;
Hirokazu Ueda, Sendai, JP;
Yuichiro Morozumi, Nirasaki, JP;
Katsushige Harada, Nirasaki, JP;
Kazuhide Hasebe, Nirasaki, JP;
Tadahiro Ohmi, Sendai, JP;
Akinobu Teramoto, Sendai, JP;
Hiroshi Kambayashi, Yokohama, JP;
Hirokazu Ueda, Sendai, JP;
Yuichiro Morozumi, Nirasaki, JP;
Katsushige Harada, Nirasaki, JP;
Kazuhide Hasebe, Nirasaki, JP;
Tadahiro Ohmi, Sendai, JP;
TOHOKU UNIVERSITY, Sendai-shi, JP;
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A method for fabricating a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes forming a gate insulating film, in which at least one film selected from the group of a SiOfilm and an AlOfilm is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.