The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Oct. 11, 2011
Andrew Edwards, San Jose, CA (US);
Hui Nie, Cupertino, CA (US);
Isik C. Kizilyalli, San Francisco, CA (US);
Richard J. Brown, Los Gatos, CA (US);
David P. Bour, Cupertino, CA (US);
Linda Romano, Sunnyvale, CA (US);
Thomas R. Prunty, Santa Clara, CA (US);
Andrew Edwards, San Jose, CA (US);
Hui Nie, Cupertino, CA (US);
Isik C. Kizilyalli, San Francisco, CA (US);
Richard J. Brown, Los Gatos, CA (US);
David P. Bour, Cupertino, CA (US);
Linda Romano, Sunnyvale, CA (US);
Thomas R. Prunty, Santa Clara, CA (US);
Avogy, Inc., San Jose, CA (US);
Abstract
A semiconductor structure includes a III-nitride substrate with a first side and a second side opposing the first side. The III-nitride substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure further includes a III-nitride epitaxial layer of the first conductivity type coupled to the first surface of the III-nitride substrate, a first metallic structure electrically coupled to the second surface of the III-nitride substrate, and a III-nitride epitaxial structure of a second conductivity type coupled to the III-nitride epitaxial layer. The III-nitride epitaxial structure comprises at least one edge termination structure.