The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Aug. 09, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Sey-Ping Sun, Hsin-Chu, TW;
Ling-Yen Yeh, Hsin-Chu, TW;
Chi-Yuan Shih, Hsin-Chu, TW;
Li-Chi Yu, Jhubei, TW;
Chun Hsiung Tsai, Xinpu Township, TW;
Chin-Hsiang Lin, Hsin-Chu, TW;
Neng-Kuo Chen, Sinshih Township, TW;
Meng-Chun Chang, Taipei, TW;
Ta-Chun Ma, Hsin-Chu, TW;
Gin-Chen Huang, New Taipei, TW;
Yen-Chun Huang, New Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method includes growing an epitaxy semiconductor region at a major surface of a wafer. The epitaxy semiconductor region has an upward facing facet facing upwardly and a downward facing facet facing downwardly. The method further includes forming a first metal silicide layer contacting the upward facing facet, and forming a second metal silicide layer contacting the downward facing facet. The first metal silicide layer and the second metal silicide layer comprise different metals.