The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Nov. 15, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chi-Wen Chang, Yuanlin Township, TW;
Hui Yu Lee, Hsinchu, TW;
Ya Yun Liu, Jhubei, TW;
Jui-Feng Kuan, Zhubei, TW;
Yi-Kan Cheng, Taipei, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 9/455 (2006.01); G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
G06F 17/5081 (2013.01); G06F 17/5009 (2013.01); G06F 17/5068 (2013.01); G06F 2217/80 (2013.01);
Abstract
A method of designing a semiconductor device is performed by at least one processor. In the method, a first environment temperature for a first substrate is determined based on an operational temperature of a second substrate, the first and second substrates stacked one upon another in the semiconductor device. An operation of at least one first circuit element in the first substrate is simulated based on the first environment temperature.