The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2015

Filed:

May. 20, 2015
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Jiang Lu, Milipitas, CA (US);

Hyoung-Chan Ha, San Jose, CA (US);

Paul F. Ma, Santa Clara, CA (US);

Seshadri Ganguli, Sunnyvale, CA (US);

Joseph F. Aubuchon, San Jose, CA (US);

Sang-ho Yu, Cupertino, CA (US);

Murali K. Narasimhan, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B05D 5/12 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76871 (2013.01); H01L 21/28562 (2013.01); H01L 21/28568 (2013.01); H01L 21/76862 (2013.01); H01L 21/76864 (2013.01); H01L 21/76873 (2013.01);
Abstract

Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.


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