The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Feb. 18, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chen-Hao Chiang, Jhongli, TW;
Po-Chun Liu, Hsinchu, TW;
Chi-Ming Chen, Zhubei, TW;
Min-Chang Ching, Zhubei, TW;
Chung-Yi Yu, Hsinchu, TW;
Chia-Shiung Tsai, Hsinchu, TW;
Ru-Liang Lee, Hsinchu, TW;
Abstract
A method comprises depositing a first layer comprising aluminum nitride over a substrate. The method further comprises depositing a second layer comprising aluminum gallium nitride over the first layer. The method also comprises depositing a third layer comprising indium gallium nitride over the second layer. The method additionally comprises removing some of the third layer leaving a first portion of the third layer and a second portion of the third layer. The method further comprises reducing an aluminum content of at least the first layer by drawing aluminum atoms from the first layer into at least the second layer beneath the first portion and the second portion of the third layer. The method also comprises depositing a source contact over the first portion of the third layer and a drain contact over the second portion of the third layer.