The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Sep. 04, 2013
Taiwan Semiconductor Manufacturng Company, Ltd., Hsinchu, TW;
Cheng-Hao Hou, Hsinchu, TW;
Peng-Soon Lim, Johor, TW;
Da-Yuan Lee, Jhubei, TW;
Xiong-Fei Yu, Hsinchu, TW;
Chun-Yuan Chou, Taipei, TW;
Fan-Yi Hsu, Toufen Town, TW;
Jian-Hao Chen, Hsinchu, TW;
Kuang-Yuan Hsu, Fongyuan, TW;
Abstract
A method of fabricating a metal gate electrode of a field effect transistor includes forming a dielectric layer over an active region, and forming an opening in the dielectric layer. The method further includes partially filling the opening with a high-dielectric-constant material, partially filling the opening with a conformal first metal material over the high-dielectric-constant material, and filling the opening with a capping layer over the first metal material. The method further includes partially removing the first metal material and capping layer in the opening using a wet etching process. The method further includes fully removing the remaining capping layer in the opening using a wet etching process. The method further includes depositing a second metal material in the opening over the remaining first metal material, and planarizing the second metal material.