The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Oct. 27, 2010
Sung IL Chung, Gyeongsangnam-do, KR;
Hyeon Seok OH, Gyeonggi-do, KR;
S. A. Nikiforov, Gyeongsangnam-do, KR;
Pan Kyeom Kim, Gyeongsangnam-do, KR;
Hyeon Taeg Kim, Gyeongsangnam-do, KR;
Jeong Woo Jeon, Gyeongsangnam-do, KR;
Jong Moon Kim, Daegu, KR;
Sung Il Chung, Gyeongsangnam-do, KR;
Hyeon Seok Oh, Gyeonggi-do, KR;
S. A. Nikiforov, Gyeongsangnam-do, KR;
Pan Kyeom Kim, Gyeongsangnam-do, KR;
Hyeon Taeg Kim, Gyeongsangnam-do, KR;
Jeong Woo Jeon, Gyeongsangnam-do, KR;
Jong Moon Kim, Daegu, KR;
Korea Electrotechnology Research Institute, Gyeongsangnam-Do, KR;
Abstract
Disclosed is an apparatus and method for low-temperature plasma immersion processing of a variety of workpieces using accelerated ions, wherein low-temperature plasma is distributed around a cylindrical workpiece placed in a chamber, the workpiece is enclosed with a housing including a multi-slot extracting electrode to isolate the workpiece from plasma, and a negative potential sufficient to induce sputtering is applied to the workpiece and the electrode, so that ions from plasma are accelerated within the sheath formed between the extracting electrode and plasma, pass through the slot part of the electrode and bombard the workpiece, thus polishing the surface of the workpiece. This apparatus and method is effective for surface smoothing to ones of nm of large cylindrical substrates particularly substrates for micro or nanopattern transfer. This method includes plasma cleaning, surface activating, surface smoothing, dry etching, deposition, plasma immersion ion implantation and deposition within a single or multi chamber.