The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2015

Filed:

Mar. 15, 2011
Applicants:

Yaojian Lin, Singapore, SG;

Haijing Cao, Singapore, SG;

Kang Chen, Singapore, SG;

Jianmin Fang, Singapore, SG;

Inventors:

Yaojian Lin, Singapore, SG;

Haijing Cao, Singapore, SG;

Kang Chen, Singapore, SG;

Jianmin Fang, Singapore, SG;

Assignee:

STATS ChipPAC, Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 23/24 (2006.01); H01L 23/528 (2006.01); H01L 23/552 (2006.01); H01L 23/66 (2006.01); H01L 25/10 (2006.01); H01L 25/16 (2006.01); H01L 25/00 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3135 (2013.01); H01L 23/24 (2013.01); H01L 23/31 (2013.01); H01L 23/3114 (2013.01); H01L 23/3128 (2013.01); H01L 23/3157 (2013.01); H01L 23/5283 (2013.01); H01L 23/552 (2013.01); H01L 23/66 (2013.01); H01L 24/24 (2013.01); H01L 25/105 (2013.01); H01L 25/16 (2013.01); H01L 25/50 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/24195 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/81005 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/09701 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/14 (2013.01); H01L 2924/1433 (2013.01); H01L 2924/15192 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19104 (2013.01); H01L 2924/19105 (2013.01); H01L 2924/30105 (2013.01);
Abstract

A semiconductor device includes a first conductive layer and conductive pillars disposed over the first conductive layer and directly contacting the first conductive layer. The semiconductor device includes an Integrated Passive Device (IPD) mounted to the first conductive layer such that the IPD is disposed between the conductive pillars. The IPD is self-aligned to the first conductive layer, and includes a metal-insulator-metal capacitor disposed over a first substrate and a wound conductive layer forming an inductor disposed over the first substrate. The semiconductor device includes a discrete capacitor mounted over the first conductive layer. The discrete capacitor is electrically connected to one of the conductive pillars. The semiconductor device includes an encapsulant disposed around the IPD, discrete capacitor, and conductive pillars, a first insulation layer disposed over the encapsulant and conductive pillars, and a second conductive layer disposed over the first insulating layer. The second conductive layer is electrically connected to the conductive pillars.


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