The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2015

Filed:

Sep. 28, 2012
Applicant:

Jsr Corporation, Tokyo, JP;

Inventors:

Shinya Nakafuji, Tokyo, JP;

Satoru Murakami, Tokyo, JP;

Yoshio Takimoto, Tokyo, JP;

Masayuki Motonari, Tokyo, JP;

Assignee:

JSR Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); C08F 10/00 (2006.01); G03F 7/095 (2006.01); G03F 7/038 (2006.01); C08G 61/02 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G03F 7/095 (2013.01); G03F 7/0384 (2013.01); C08G 61/02 (2013.01); C08G 2261/3422 (2013.01); H01L 21/0271 (2013.01);
Abstract

A method for forming a pattern includes providing a resist underlayer film on a substrate using a first composition for forming a resist underlayer film. The first composition includes a polymer having a structural unit represented by a following formula (1). In the formula (1), Arand Areach independently represent a bivalent group represented by a following formula (2). A resist coating film is provided on the resist underlayer film using a resist composition. A resist pattern is formed using the resist coating film. A predetermined pattern is formed on the substrate by sequentially dry-etching the resist underlayer film and the substrate using the resist pattern as a mask.


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