The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2015

Filed:

Mar. 24, 2014
Applicants:

Tokyo Electron Limited, Minato-ku, JP;

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Shigeru Tahara, Kurokawa-gun, JP;

Eiichi Nishimura, Kurokawa-gun, JP;

Takanori Matsumoto, Yokkaichi, JP;

Assignees:

TOKYO ELECTRON LIMITED, Minato-ku, JP;

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); B05D 3/14 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); B05D 3/145 (2013.01); H01L 21/02057 (2013.01); H01L 21/31116 (2013.01); H01L 21/28 (2013.01); H01L 21/76224 (2013.01);
Abstract

One embodiment of the deposit removal method includes: preparing a substrate having a pattern on which a deposit is deposited, the pattern being formed by etching; exposing the substrate to a first atmosphere containing hydrogen fluoride gas; exposing the substrate to oxygen plasma while heating after the step of exposing the substrate to the first atmosphere; and exposing the substrate to a second atmosphere containing hydrogen fluoride gas to remove the deposit on the substrate after the step of exposing the substrate to the oxygen plasma.


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Tahara, Shigeru. (2015). Deposit removal method (U.S. Patent No. 9177816). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9177816

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