The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2015

Filed:

Jul. 31, 2013
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wen-Li Cheng, Taipei, TW;

Ming-Hui Chih, Luzho, TW;

Chia-Ping Chiang, Taipei, TW;

Ken-Hsien Hsieh, Taipei, TW;

Tsong-Hua Ou, Taipei, TW;

Wen-Chun Huang, Tainan, TW;

Ru-Gun Liu, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); G03F 1/00 (2012.01);
U.S. Cl.
CPC ...
G03F 1/00 (2013.01);
Abstract

A system and method of decomposing a single photoresist mask pattern to three photoresist mask patterns. The system and method assign nodes to polygon features on the single photoresist mask pattern, designate nodes as being adjacent nodes for those nodes that are less than a predetermined distance apart, iteratively remove nodes having 2 or less adjacent nodes until no nodes having 2 or less adjacent nodes remain, identify one or more internal nodes, map photoresist mask pattern designations (colors) to the internal nodes, and replace and map a color to each of the nodes removed by the temporarily removing nodes, such that each node does not have an adjacent node of the same color.


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