The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Apr. 29, 2014
Avogy, Inc., San Jose, CA (US);
Donald R. Disney, Cupertino, CA (US);
Andrew P. Edwards, San Jose, CA (US);
Hui Nie, Cupertino, CA (US);
Richard J. Brown, Los Gatos, CA (US);
Isik C. Kizilyalli, San Francisco, CA (US);
David P. Bour, Cupertino, CA (US);
Linda Romano, Sunnyvale, CA (US);
Thomas R. Prunty, Santa Clara, CA (US);
Avogy, Inc., San Jose, CA (US);
Abstract
A method for fabricating an edge termination structure includes providing a substrate having a first surface and a second surface and a first conductivity type, forming a first GaN epitaxial layer of the first conductivity type coupled to the first surface of the substrate, and forming a second GaN epitaxial layer of a second conductivity type opposite to the first conductivity type. The second GaN epitaxial layer is coupled to the first GaN epitaxial layer. The method also includes implanting ions into a first region of the second GaN epitaxial layer to electrically isolate a second region of the second GaN epitaxial layer from a third region of the second GaN epitaxial layer. The method further includes forming an active device coupled to the second region of the second GaN epitaxial layer and forming the edge termination structure coupled to the third region of the second GaN epitaxial layer.