The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
May. 10, 2010
Applicants:
Timo Hatanpaa, Espoo, FI;
Marko Vehkamaki, Helsinki, FI;
Mikko Ritala, Espoo, FI;
Markku Leskela, Espoo, FI;
Inventors:
Timo Hatanpaa, Espoo, FI;
Marko Vehkamaki, Helsinki, FI;
Mikko Ritala, Espoo, FI;
Markku Leskela, Espoo, FI;
Assignee:
ASM INTERNATIONAL N.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/40 (2006.01); H01G 4/10 (2006.01); H01L 21/314 (2006.01); H01L 21/316 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45525 (2013.01); C23C 16/40 (2013.01); C23C 16/45553 (2013.01); H01G 4/10 (2013.01); H01L 21/3141 (2013.01); H01L 21/31691 (2013.01); H01L 28/55 (2013.01);
Abstract
Processes are provided for producing bismuth-containing oxide thin films by atomic layer deposition. In preferred embodiments an organic bismuth compound having at least one monodentate alkoxide ligand is used as a bismuth source material. Bismuth-containing oxide thin films can be used, for example, as ferroelectric or dielectric materials in integrated circuits and as superconductor materials.