The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
May. 23, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Ya-Lien Lee, Hsinchu County, TW;
Hung-Wen Su, Hsinchu County, TW;
Yu-Hung Lin, Taichung, TW;
Kuei-Pin Lee, New Taipei, TW;
Yu-Min Chang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A structure for an integrated circuit includes a substrate, a cap layer deposited on the substrate, a dielectric layer deposited on the cap layer, and a trench embedded in the dielectric layer. The trench includes a TaN layer deposited on a side wall of the trench wherein the TaN layer has a greater concentration of nitrogen than tantalum, a Ta layer deposited on the TaN layer, and a Cu deposited on the Ta layer. The structure further includes a via integrated into the trench at bottom of the filled trench. In an embodiment, both the TaN layer and the Ta layer are formed with physical vapor deposition (PVD) wherein the TaN layer is formed with plasma sputtering a Ta target with an Nflow at least 20 sccm.