The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2015

Filed:

Jul. 18, 2013
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Shang-Chieh Chien, New Taipei, TW;

Shu-Hao Chang, Taipei, TW;

Jui-Ching Wu, Hsinchu, TW;

Jeng-Horng Chen, Hsinchu, TW;

Anthony Yen, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0276 (2013.01); H01L 21/0337 (2013.01); H01L 21/308 (2013.01); H01L 21/3081 (2013.01); H01L 21/3085 (2013.01); H01L 21/3086 (2013.01);
Abstract

The present disclosure provides a method for forming resist patterns. The method includes providing a substrate; forming a material layer including a plurality of quenchers on the substrate; forming a resist layer on the material layer; exposing the resist layer; and developing the resist layer to form a structure featuring resist remaining layer on an upper surface of the material layer, and a plurality of resist features on the resist remaining layer to improve the yield of lithography process.


Find Patent Forward Citations

Loading…