The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Feb. 21, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Shang-Chieh Chien, New Taipei, TW;
Shu-Hao Chang, Taipei, TW;
Hsiang-Yu Chou, Taipei, TW;
Ming-Chin Chien, Hsinchu, TW;
Jui-Ching Wu, Hsinchu, TW;
Jeng-Horng Chen, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of reducing resist outgassing for EUV lithography is disclosed. The method includes forming a material layer over a substrate wherein a top surface of the material layer contains a certain concentration of a quencher or a base. The method further includes forming a resist layer over the top surface of the material layer and exposing the resist layer to a EUV radiation for patterning. The quencher or the base underneath the resist layer acts to suppress resist outgassing during the EUV exposure. The material layer itself may serve as a hard mask layer or an anti-reflection layer for the patterning process, in addition to being the carrier of the quencher or the base. The method can be used in other types of lithography, such as e-beam lithography, for reducing resist outgassing.