The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Aug. 04, 2011
David P. Bour, Cupertino, CA (US);
Thomas R. Prunty, Santa Clara, CA (US);
Linda Romano, Sunnyvale, CA (US);
Andrew P. Edwards, San Jose, CA (US);
Isik C. Kizilyalli, San Francisco, CA (US);
Hui Nie, Cupertino, CA (US);
Richard J. Brown, Los Gatos, CA (US);
Mahdan Raj, Cupertino, CA (US);
David P. Bour, Cupertino, CA (US);
Thomas R. Prunty, Santa Clara, CA (US);
Linda Romano, Sunnyvale, CA (US);
Andrew P. Edwards, San Jose, CA (US);
Isik C. Kizilyalli, San Francisco, CA (US);
Hui Nie, Cupertino, CA (US);
Richard J. Brown, Los Gatos, CA (US);
Mahdan Raj, Cupertino, CA (US);
Avogy, Inc., San Jose, CA (US);
Abstract
A semiconductor device includes a III-nitride substrate having a first conductivity type and a first electrode electrically coupled to the III-nitride substrate. The semiconductor device also includes a III-nitride material having a second conductivity type coupled to the III-nitride substrate at a regrowth interface and a p-n junction disposed between the III-nitride substrate and the regrowth interface.