The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2015

Filed:

Feb. 24, 2014
Applicant:

Tsmc Solid State Lighting Ltd., Hsinchu, TW;

Inventors:

Chen-Hua Yu, Hsin-Chu, TW;

Wen-Chih Chiou, Miaoli, TW;

Ding-Yuan Chen, Taichung, TW;

Chia-Lin Yu, Sigang, TW;

Hung-Ta Lin, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 29/26 (2006.01); H01L 31/12 (2006.01); H01L 33/00 (2010.01); H01L 33/22 (2010.01); H01L 33/24 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/22 (2013.01); H01L 33/007 (2013.01); H01L 33/0075 (2013.01); H01L 33/06 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01);
Abstract

A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions.


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