The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2015

Filed:

Nov. 12, 2014
Applicants:

International Business Machines Corporation, Armonk, NY (US);

Globalfoundries Inc., Grand Cayman, KY;

Renesas Electronic Corporation, Kanagawa, JP;

Stmicroelectronics, Inc., Coppell, TX (US);

Inventors:

Frieder H. Baumann, Red Bank, NJ (US);

Tibor Bolom, Litomerice, CZ;

Chao-Kun Hu, Somers, NY (US);

Koichi Motoyama, Clifton Park, NY (US);

Chengyu Niu, Niskayuna, NY (US);

Andrew H. Simon, Fishkill, NY (US);

Assignees:

International Business Machines Corporation, Armonk, NY (US);

GLOBALFOUNDRIES, INC., Grand Cayman Islands, KY;

Renesas Electronics Corporation, Kanagawa, JP;

STMICROELECTRONICS, INC., Coppell, TX (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/76843 (2013.01); H01L 21/76849 (2013.01); H01L 21/76873 (2013.01); H01L 21/76804 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A structure having a diffusion barrier positioned adjacent to a sidewall and a bottom of an opening being etched in a layer of dielectric material. The structure also having a metal liner positioned directly on top of the diffusion barrier, a seed layer positioned directly on top of the metal liner, wherein the seed layer is made from a material comprising copper, a copper material positioned directly on top of the seed layer, a metallic cap positioned directly on top of and selective to the copper material, and a capping layer positioned directly on top of and adjacent to the metallic cap.


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