The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Sep. 15, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chia-Yu Lu, Hsin-Chu, TW;
Shyue-Shyh Lin, Zhubei, TW;
Chin-Shan Hou, Hsin-Chu, TW;
Kuo-Feng Yu, Zhudong Township, TW;
Tung-Heng Hsieh, Zhudong Town, TW;
Chih-Hung Wang, Hsin-Chu, TW;
Jian-Hao Chen, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Semiconductor devices, methods of manufacture thereof, and methods of forming resistors are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a first insulating material over a workpiece, and forming a conductive chemical compound material over the first insulating material. The conductive chemical compound material is patterned to form a resistor. A second insulating material is formed over the resistor, and the second insulating material is patterned. The patterned second insulating material is filled with a conductive material to form a first contact coupled to a first end of the resistor and to form a second contact coupled to a second end of the resistor.