The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2015

Filed:

Jun. 13, 2013
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Jun Yamawaku, Yamanashi, JP;

Chishio Koshimizu, Yamanashi, JP;

Mitsuhiro Tachibana, Iwate, JP;

Hitoshi Kato, Iwate, JP;

Takeshi Kobayashi, Iwate, JP;

Shigehiro Miura, Iwate, JP;

Takafumi Kimura, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/509 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02104 (2013.01); C23C 16/4554 (2013.01); C23C 16/45519 (2013.01); C23C 16/45551 (2013.01); C23C 16/509 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/0234 (2013.01); H01L 21/02164 (2013.01); H01L 21/02167 (2013.01); H01L 21/02274 (2013.01); H01L 21/68764 (2013.01); H01L 21/68771 (2013.01);
Abstract

A film deposition apparatus configured to perform a film deposition process on a substrate in a vacuum chamber includes a turntable configured to rotate a substrate loading area to receive the substrate, a film deposition area including at least one process gas supplying part configured to supply a process gas onto the substrate loading area and configured to form a thin film by depositing at least one of an atomic layer and a molecular layer along with a rotation of the turntable, a plasma treatment part provided away from the film deposition area in a rotational direction of the turntable and configured to treat the at least one of the atomic layer and the molecular layer for modification by plasma, and a bias electrode part provided under the turntable without contacting the turntable and configured to generate bias potential to attract ions in the plasma toward the substrate.


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