The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Apr. 09, 2013
International Business Machines Corporation, Armonk, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Bruce B. Doris, Slingerlands, NY (US);
Laurent Grenouillet, Rives, FR;
Ali Khakifirooz, Mountain View, CA (US);
Yannick C. Le Tiec, Crolles, FR;
Qing Liu, Guilderland, NY (US);
Maud Vinet, Rives sur Fure, FR;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a semiconductor-on-insulator (SOI) device includes defining a shallow trench isolation (STI) structure in an SOI substrate, the SOI substrate including a bulk layer, a buried insulator (BOX) layer over the bulk layer, and an SOI layer over the BOX layer; forming a doped region in a portion of the bulk layer corresponding to a lower location of the STI structure, the doped region extending laterally into the bulk layer beneath the BOX layer; selectively etching the doped region of the bulk layer with respect to undoped regions of the bulk layer such that the lower location of the STI structure undercuts the BOX layer; and filling the STI structure with an insulator fill material.