The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
May. 08, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chung-Yi Lin, Hsinchu County, TW;
Jiing-Feng Yang, Hsinchu County, TW;
Tzu-Hao Huang, Hsinchu County, TW;
Chih-Hao Hsieh, Taipei, TW;
Dian-Hau Chen, Hsinchu, TW;
Hsiang-Lin Chen, Hsinchu, TW;
Ko-Bin Kao, Taichung County, TW;
Yung-Shih Cheng, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Compnay, Ltd., Hsin-Chu, TW;
Abstract
Integrated circuit methods are described. The methods include providing a photomask that includes two main features for two via openings and further includes an optical proximity correction (OPC) feature linking the two main features; forming a hard mask layer on a substrate, the hard mask layer including two trench openings; forming a patterned resist layer over the hard mask layer using the photomask, wherein the patterned resist layer includes a peanut-shaped opening with two end portion aligned with the two trench openings of the hard mask layer, respectively; and performing a first etch process to the substrate using the hard mask layer and the patterned resist layer as a combined etch mask.