The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Sep. 10, 2013
Maxim Integrated Products, Inc., San Jose, CA (US);
Yong L. Xu, Plano, TX (US);
Duane T. Wilcoxen, Dallas, TX (US);
Yi-Sheng A. Sun, San Jose, CA (US);
Viren Khandekar, Flower Mound, TX (US);
Arkadii V. Samoilov, Saratoga, CA (US);
Maxim Integrated Products, Inc., San Jose, CA (US);
Abstract
Semiconductor devices are described that have an extended under ball metallization configured to mitigate dielectric layer cracking due to stress, particularly stress caused by CTE mismatch during thermal cycling tests, dynamic deformation during drop tests, or cyclic bending tests, and so on. In an implementation, the semiconductor package devices include an integrated circuit chip having a solder ball and under ball metallization, formed on the integrated circuit chip, which is configured to receive the solder ball so that the solder ball and the under ball metallization have a contact area there between, wherein the area of the under ball metallization is area greater than the contact area.