The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Nov. 16, 2012
Applicant:
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Inventors:
Tomohiro Kobayashi, Joetsu, JP;
Kazuhiro Katayama, Joetsu, JP;
Jun Hatakeyama, Joetsu, JP;
Kenji Funatsu, Joetsu, JP;
Seiichiro Tachibana, Joetsu, JP;
Assignee:
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/38 (2006.01); G03F 7/004 (2006.01); C08F 220/34 (2006.01); C08F 220/36 (2006.01); C08F 226/06 (2006.01); C08F 226/10 (2006.01); C08F 228/02 (2006.01); C08F 228/06 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); C08F 220/38 (2006.01);
U.S. Cl.
CPC ...
G03F 7/38 (2013.01); C08F 220/34 (2013.01); C08F 220/36 (2013.01); C08F 226/06 (2013.01); C08F 226/10 (2013.01); C08F 228/02 (2013.01); C08F 228/06 (2013.01); G03F 7/004 (2013.01); G03F 7/0382 (2013.01); G03F 7/0397 (2013.01); G03F 7/2041 (2013.01); G03F 7/325 (2013.01); C08F 2220/343 (2013.01); C08F 2220/365 (2013.01); C08F 2220/382 (2013.01); C08F 2220/385 (2013.01); C08F 2220/387 (2013.01);
Abstract
A negative pattern is formed by applying a resist composition comprising (A) a polymer comprising recurring units (a1) having a carboxyl group protected with an acid labile group and recurring units (a2) having an amino group, amide bond, carbamate bond or nitrogen-containing heterocycle, (B) a photoacid generator, and (C) an organic solvent onto a substrate, prebaking, exposing, baking, and selectively dissolving an unexposed region of the resist film in an organic solvent-based developer.